HMD13P5N10S HY Electronic (Cayman) Limited

Description: HMD13P5N10S, Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).