Продукція > BRUCKEWELL > HMP065N180C

HMP065N180C Bruckewell

HMP065N180C.pdf Виробник: Bruckewell
Description: GAN HEMT,650V,16.1A,185M,CASCODE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -20V
Drain to Source Voltage (Vdss): 650 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+675.36 грн
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис HMP065N180C Bruckewell

Description: GAN HEMT,650V,16.1A,185M,CASCODE, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Cascode Gallium Nitride FET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -20V, Drain to Source Voltage (Vdss): 650 V.