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HN3C51F-GR(TE85L,F

HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage

HN3C51F.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 120V 100MA SM6
Supplier Device Package: SM6
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
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Технічний опис HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage

Description: TRANS 2NPN DUAL 120V 100MA SM6, Supplier Device Package: SM6, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 120V, Current - Collector (Ic) (Max): 100mA, Power - Max: 300mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SC-74, SOT-457, Packaging: Tape & Reel (TR).