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HS54095TZ-E Renesas

HS54095.pdf?t.download=true&u=ovmfp3 Виробник: Renesas
Description: HS54095TZ-E - N-CHANNEL POWER MO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 66 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
382+55.70 грн
Мінімальне замовлення: 382
В кошику  од. на суму  грн.
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Технічний опис HS54095TZ-E Renesas

Description: HS54095TZ-E - N-CHANNEL POWER MO, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-92, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 66 pF @ 25 V.