HSP39N65 HY Electronic (Cayman) Limited

Description: N-Channel SiC power MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V, Vgs(th) (Max) @ Id: 5.6V @ 6.7mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V.