HUF75339S3 Harris Corporation

Description: MOSFET N-CH 55V 70A TO262AA, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: TO-262AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 124W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk.