Продукція > FAIRCHILD SEMICONDUCTOR > HUF75623P3
HUF75623P3

HUF75623P3 Fairchild Semiconductor

FAIRS16148-1.pdf?t.download=true&u=5oefqw
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 100V 22A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
579+38.16 грн
Мінімальне замовлення: 579
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис HUF75623P3 Fairchild Semiconductor

Description: MOSFET N-CH 100V 22A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.