HUF75639S3STNL Fairchild Semiconductor

Description: 56A, 100V, 0.025OHM, N-CHANNEL P, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk, Mounting Type: Surface Mount.