ICPB1020-1-110I Microchip Technology
Виробник: Microchip TechnologyDescription: DC-14 GHZ 100W DISCRETE GAN HEMT
Packaging: Box
Package / Case: Die
Current Rating (Amps): 8A
Mounting Type: Surface Mount
Frequency: 14GHz
Power - Output: 100W
Gain: 7.4dB
Technology: GaN HEMT
Supplier Device Package: Die
Voltage - Rated: 28 V
Voltage - Test: 28 V
Current - Test: 1 A
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Технічний опис ICPB1020-1-110I Microchip Technology
Description: DC-14 GHZ 100W DISCRETE GAN HEMT, Packaging: Box, Package / Case: Die, Current Rating (Amps): 8A, Mounting Type: Surface Mount, Frequency: 14GHz, Power - Output: 100W, Gain: 7.4dB, Technology: GaN HEMT, Supplier Device Package: Die, Voltage - Rated: 28 V, Voltage - Test: 28 V, Current - Test: 1 A.