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ICPB2005-1-110I

ICPB2005-1-110I Microchip Technology

ICPB2005.pdf Виробник: Microchip Technology
Description: DC-12 GHZ 25W DISCRETE GAN HEMT
Packaging: Box
Package / Case: Die
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 12GHz
Power - Output: 25W
Gain: 9.5dB
Technology: GaN HEMT
Supplier Device Package: Die
Voltage - Rated: 28 V
Voltage - Test: 28 V
Current - Test: 250 mA
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Технічний опис ICPB2005-1-110I Microchip Technology

Description: DC-12 GHZ 25W DISCRETE GAN HEMT, Packaging: Box, Package / Case: Die, Current Rating (Amps): 2A, Mounting Type: Surface Mount, Frequency: 12GHz, Power - Output: 25W, Gain: 9.5dB, Technology: GaN HEMT, Supplier Device Package: Die, Voltage - Rated: 28 V, Voltage - Test: 28 V, Current - Test: 250 mA.