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ICPB2005-1-110I

ICPB2005-1-110I Microchip Technology

ICPB2005.pdf
Виробник: Microchip Technology
Description: DC-12 GHZ 25W DISCRETE GAN HEMT
Current - Test: 250 mA
Voltage - Test: 28 V
Voltage - Rated: 28 V
Supplier Device Package: Die
Technology: GaN HEMT
Gain: 9.5dB
Power - Output: 25W
Frequency: 12GHz
Mounting Type: Surface Mount
Current Rating (Amps): 2A
Package / Case: Die
Packaging: Box
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Технічний опис ICPB2005-1-110I Microchip Technology

Description: DC-12 GHZ 25W DISCRETE GAN HEMT, Current - Test: 250 mA, Voltage - Test: 28 V, Voltage - Rated: 28 V, Supplier Device Package: Die, Technology: GaN HEMT, Gain: 9.5dB, Power - Output: 25W, Frequency: 12GHz, Mounting Type: Surface Mount, Current Rating (Amps): 2A, Package / Case: Die, Packaging: Box.