IDB18E120 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 31A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 31A
Technology: Standard
Reverse Recovery Time (trr): 195 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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Технічний опис IDB18E120 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 31A TO263, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: PG-TO263-3-2, Current - Average Rectified (Io): 31A, Technology: Standard, Reverse Recovery Time (trr): 195 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.