IDB18E120 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 1.2KV 31A TO263
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 31A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 21100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 265+ | 75.06 грн |
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Технічний опис IDB18E120 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 31A TO263, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 195 ns, Technology: Standard, Current - Average Rectified (Io): 31A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.