Технічний опис IDB45E60ATMA1 Infineon Technologies
Description: DIODE GEN PURP 600V 71A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140 ns, Technology: Standard, Current - Average Rectified (Io): 71A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 45 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції IDB45E60ATMA1
| Фото | Назва | Виробник | Інформація |
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IDB45E60ATMA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 600V 71A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Current - Average Rectified (Io): 71A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 45 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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