Технічний опис IDC08S120EX1SA3 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 7.5A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 380pF @ 1V, 1MHz, Current - Average Rectified (Io): 7.5A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Інші пропозиції IDC08S120EX1SA3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IDC08S120EX1SA3 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 1.2KV 7.5A WAFERPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 7.5A Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
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