Технічний опис IDC40D120T6HX1SA1 Infineon Technologies
Description: DIODE GEN PURP 1.2KV 75A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 75A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 14 µA @ 1200 V.
Інші пропозиції IDC40D120T6HX1SA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IDC40D120T6HX1SA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 1.2KV 75A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 Current - Reverse Leakage @ Vr: 14 µA @ 1200 V |
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