Технічний опис IDH04SG60CXKSA1 Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 80pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Інші пропозиції IDH04SG60CXKSA1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IDH04SG60CXKSA1 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 600V 4A TO220-2-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 80pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товар відсутній |