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IDH06G65C5

IDH06G65C5 Infineon Technologies

Infineon-IDH06G65C5-DS-v02_02-en.pdf
Виробник: Infineon Technologies
SiC Schottky Diodes SIC DIODES
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Технічний опис IDH06G65C5 Infineon Technologies

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W, Mounting: THT, Max. forward voltage: 1.8V, Power dissipation: 62W, Technology: CoolSiC™ 5G; SiC, Max. off-state voltage: 650V, Heatsink thickness: 1.17...137mm, Load current: 6A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 1.2µA, Case: PG-TO220-2, Type of diode: Schottky rectifying, Max. forward impulse current: 54A.

Інші пропозиції IDH06G65C5

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IDH06G65C5 IDH06G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 62W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
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В кошику  од. на суму  грн.
IDH06G65C5
IDH06G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; 62W
Mounting: THT
Max. forward voltage: 1.8V
Power dissipation: 62W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 6A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: PG-TO220-2
Type of diode: Schottky rectifying
Max. forward impulse current: 54A
товару немає в наявності
В кошику  од. на суму  грн.