IDH10G65C5 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 89W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2
Technology: CoolSiC™ 5G; SiC
Power dissipation: 89W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 2µA
Type of diode: Schottky rectifying
Max. forward impulse current: 71A
кількість в упаковці: 1 шт
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Технічний опис IDH10G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2, Technology: CoolSiC™ 5G; SiC, Power dissipation: 89W, Case: PG-TO220-2, Mounting: THT, Kind of package: tube, Semiconductor structure: single diode, Max. off-state voltage: 650V, Heatsink thickness: 1.17...137mm, Max. forward voltage: 1.8V, Load current: 10A, Leakage current: 2µA, Type of diode: Schottky rectifying, Max. forward impulse current: 71A, кількість в упаковці: 1 шт.
Інші пропозиції IDH10G65C5
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IDH10G65C5 | Виробник : Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
товар відсутній |
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IDH10G65C5 | Виробник : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 89W; PG-TO220-2 Technology: CoolSiC™ 5G; SiC Power dissipation: 89W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 650V Heatsink thickness: 1.17...137mm Max. forward voltage: 1.8V Load current: 10A Leakage current: 2µA Type of diode: Schottky rectifying Max. forward impulse current: 71A |
товар відсутній |