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IDH10G65C5

IDH10G65C5 Infineon Technologies

Infineon_IDH10G65C5_DS_v02_02_en.pdf
Виробник: Infineon Technologies
SiC Schottky Diodes SIC DIODES
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Технічний опис IDH10G65C5 Infineon Technologies

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA, Type of diode: Schottky rectifying, Mounting: THT, Max. forward impulse current: 71A, Max. forward voltage: 1.8V, Power dissipation: 89W, Technology: CoolSiC™ 5G; SiC, Max. off-state voltage: 650V, Heatsink thickness: 1.17...137mm, Load current: 10A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 2µA, Case: PG-TO220-2.

Інші пропозиції IDH10G65C5

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IDH10G65C5 IDH10G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 71A
Max. forward voltage: 1.8V
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Case: PG-TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
IDH10G65C5
IDH10G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 71A
Max. forward voltage: 1.8V
Power dissipation: 89W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Heatsink thickness: 1.17...137mm
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 2µA
Case: PG-TO220-2
товару немає в наявності
В кошику  од. на суму  грн.