Технічний опис IDH10G65C5 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 10A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.8V, Max. forward impulse current: 71A, Leakage current: 2µA, Power dissipation: 89W, Kind of package: tube, Heatsink thickness: 1.17...137mm.
Інші пропозиції IDH10G65C5
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IDH10G65C5 | Виробник : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 71A Leakage current: 2µA Power dissipation: 89W Kind of package: tube Heatsink thickness: 1.17...137mm |
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