IDY10S120XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE SIC 1.2KV 5A PGTO247HC3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO247HC-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
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Технічний опис IDY10S120XKSA1 Infineon Technologies
Description: DIODE SIC 1.2KV 5A PGTO247HC3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: PG-TO247HC-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V.