IFS150B12N3E4PB11BPSA1 Infineon Technologies
Виробник: Infineon TechnologiesMIPAQ base Modul with Trench/Feild stopp IGBT4 and Ewithter Controlled Diode and Press FIT/bereits aufgetragenem ThermalInter face Material MIPAQ basemod
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Технічний опис IFS150B12N3E4PB11BPSA1 Infineon Technologies
Description: IGBT MOD 1200V 300A 750W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 750 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V.
Інші пропозиції IFS150B12N3E4PB11BPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IFS150B12N3E4PB11BPSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 300A 750W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 750 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
товару немає в наявності |