IGN1011L70 Integra Technologies Inc.
Виробник: Integra Technologies Inc.
Description: RF MOSFET GAN HEMT 50V PL32A2
Current - Test: 22 mA
Voltage - Test: 50 V
Voltage - Rated: 120 V
Supplier Device Package: PL32A2
Technology: GaN HEMT
Gain: 22dB
Power - Output: 80W
Frequency: 1.03GHz ~ 1.09GHz
Mounting Type: Chassis Mount
Package / Case: PL32A2
Packaging: Bulk
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Технічний опис IGN1011L70 Integra Technologies Inc.
Description: RF MOSFET GAN HEMT 50V PL32A2, Current - Test: 22 mA, Voltage - Test: 50 V, Voltage - Rated: 120 V, Supplier Device Package: PL32A2, Technology: GaN HEMT, Gain: 22dB, Power - Output: 80W, Frequency: 1.03GHz ~ 1.09GHz, Mounting Type: Chassis Mount, Package / Case: PL32A2, Packaging: Bulk.