IGO60R070D1E8220AUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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Технічний опис IGO60R070D1E8220AUMA1 Infineon Technologies
Description: GAN HV, Packaging: Bulk, Package / Case: 20-PowerSOIC (0.433", 11.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-DSO-20-85, Part Status: Obsolete, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V.