IHW20N135R5XKSA

IHW20N135R5XKSA Infineon Technologies


INFN-S-A0001300633-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: REVERSE CONDUCTING IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/235ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
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Технічний опис IHW20N135R5XKSA Infineon Technologies

Description: REVERSE CONDUCTING IGBT, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/235ns, Switching Energy: 950µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 170 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 288 W.