IHW30N100R Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 1000V 60A 412W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/846ns
Switching Energy: 2.1mJ (off)
Test Condition: 600V, 30A, 26Ohm, 15V
Gate Charge: 209 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
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Технічний опис IHW30N100R Infineon Technologies
Description: IGBT 1000V 60A 412W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/846ns, Switching Energy: 2.1mJ (off), Test Condition: 600V, 30A, 26Ohm, 15V, Gate Charge: 209 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 412 W.