Технічний опис IKD04N60RBTMA1 Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3-11, IGBT Type: Trench, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 240µJ, Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.
Інші пропозиції IKD04N60RBTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IKD04N60RBTMA1 | Виробник : Infineon Technologies |
 Description: IGBT WITHOUT ANTI-PARALLEL DIODEPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: PG-TO252-3-11 IGBT Type: Trench Td (on/off) @ 25°C: 14ns/146ns Switching Energy: 240µJ Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
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