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IKP03N120H2XKSA1 Infineon Technologies

Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-220AB Tube

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Технічний опис IKP03N120H2XKSA1 Infineon Technologies

Description: IGBT 1200V 9.6A 62.5W TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-1, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 22 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 9.6 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9.9 A, Power - Max: 62.5 W.

Інші пропозиції IKP03N120H2XKSA1

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	IKP03N120H2XKSA1	Виробник : Infineon Technologies	Description: IGBT 1200V 9.6A 62.5W TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO220-3-1 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 290µJ Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 22 nC Part Status: Obsolete Current - Collector (Ic) (Max): 9.6 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9.9 A Power - Max: 62.5 W	товару немає в наявності	В кошику од. на суму грн.