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IKU10N60RBKMA1 Infineon Technologies

Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 20A 150000mW 3-Pin(3+Tab) TO-251

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Технічний опис IKU10N60RBKMA1 Infineon Technologies

Description: IGBT 600V 20A 150W TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 62 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: PG-TO251-3, IGBT Type: Trench, Td (on/off) @ 25°C: 14ns/192ns, Switching Energy: 590µJ, Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 64 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.

Інші пропозиції IKU10N60RBKMA1

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	IKU10N60RBKMA1	Виробник : Infineon Technologies	Description: IGBT 600V 20A 150W TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 62 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO251-3 IGBT Type: Trench Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 590µJ Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W	товару немає в наявності	В кошику од. на суму грн.