IKW25N120T2XK

IKW25N120T2XK Infineon Technologies


Infineon-IKW25N120T2-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b426d5a63ad1 Виробник: Infineon Technologies
Description: IGBT, 50A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/265ns
Switching Energy: 1.55mJ (on), 1.35mJ (off)
Test Condition: 600V, 25A, 16.4Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 349 W
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Технічний опис IKW25N120T2XK Infineon Technologies

Description: IGBT, 50A, 1200V, N-CHANNEL, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A, Supplier Device Package: PG-TO247-3-21, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/265ns, Switching Energy: 1.55mJ (on), 1.35mJ (off), Test Condition: 600V, 25A, 16.4Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 349 W.