Технічний опис IKZ50N65NH5 Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5, Type of transistor: IGBT, Technology: TRENCHSTOP™ 5, Collector-emitter voltage: 650V, Collector current: 54A, Power dissipation: 136W, Case: TO247-4, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Manufacturer series: H5, Pulsed collector current: 200A, Turn-on time: 30ns, Turn-off time: 275ns, Features of semiconductor devices: integrated anti-parallel diode.
Інші пропозиції IKZ50N65NH5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
IKZ50N65NH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 54A Power dissipation: 136W Case: TO247-4 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Pulsed collector current: 200A Turn-on time: 30ns Turn-off time: 275ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IKZ50N65NH5XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 136W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 136W
Case: TO247-4
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Pulsed collector current: 200A
Turn-on time: 30ns
Turn-off time: 275ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.



