IMBG65R010M2H Infineon Technologies
Виробник: Infineon TechnologiesDescription: IMBG65R010M2H
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 158A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1723.17 грн |
| 10+ | 1328.73 грн |
| 25+ | 1246.10 грн |
| 100+ | 1084.20 грн |
| 250+ | 1043.58 грн |
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Технічний опис IMBG65R010M2H Infineon Technologies
Description: IMBG65R010M2H, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 158A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 18.7mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V.
Інші пропозиції IMBG65R010M2H
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IMBG65R010M2H | Виробник : Infineon Technologies |
Description: IMBG65R010M2H Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 158A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V Power Dissipation (Max): 535W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 18.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V |
товару немає в наявності |