IMCQ120R005M2HXTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: SICFET N-CH 1200V 342A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 342A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 138.2A, 18V
Power Dissipation (Max): 1364W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 43.4mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 800 V
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Технічний опис IMCQ120R005M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 342A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 342A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 138.2A, 18V, Power Dissipation (Max): 1364W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 43.4mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 800 V.