Технічний опис IPA60R080P7 Rochester Electronics, LLC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 23A, Power dissipation: 29W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 80mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції IPA60R080P7
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IPA60R080P7 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 23A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |