Технічний опис IPA60R120P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP, Type of transistor: N-MOSFET, Kind of channel: enhancement, Kind of package: tube, Mounting: THT, Polarisation: unipolar, On-state resistance: 0.12Ω, Drain current: 16A, Gate-source voltage: ±20V, Power dissipation: 28W, Technology: CoolMOS™ P7, Drain-source voltage: 600V, Case: TO220FP.
Інші пропозиції IPA60R120P7
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IPA60R120P7 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 28W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: TO220FP |
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