Продукція > INFINEON TECHNOLOGIES > IPB033N10N5LF
IPB033N10N5LF

IPB033N10N5LF INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CE0FB9307C8749&compId=IPB033N10N5LF.pdf?ci_sign=8b84caa81adb999660a947a742bfb25f2bb555c1 Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
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Технічний опис IPB033N10N5LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3, Case: PG-TO263-3, Mounting: SMD, Polarisation: unipolar, On-state resistance: 3.3mΩ, Gate-source voltage: ±20V, Drain-source voltage: 100V, Drain current: 108A, Power dissipation: 179W, Kind of channel: enhancement, Technology: OptiMOS™ 5, Type of transistor: N-MOSFET.