Технічний опис IPB081N06L3 G Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3, Transistor: N-MOSFET, Technology: OptiMOS™ 3, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 50A, Power dissipation: 79W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 8.1mΩ, Mounting: SMD, Kind of channel: enhancement.
Інші пропозиції IPB081N06L3 G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPB081N06L3G | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3 Transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Power dissipation: 79W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB081N06L3G |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 79W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 79W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.