Продукція > INFINEON TECHNOLOGIES > IPB083N15N5LF
IPB083N15N5LF

IPB083N15N5LF INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CD8DE26E402749&compId=IPB083N15N5LF.pdf?ci_sign=80afe72410409132f9a6f39bef5e8c7152f678f0 Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 66A
Gate-source voltage: ±20V
Power dissipation: 179W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
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Технічний опис IPB083N15N5LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3, Case: PG-TO263-3, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, On-state resistance: 8.3mΩ, Drain current: 66A, Gate-source voltage: ±20V, Power dissipation: 179W, Drain-source voltage: 150V, Kind of channel: enhancement, Technology: OptiMOS™ 5.