Продукція > INFINEON TECHNOLOGIES > IPB110N20N3LF
IPB110N20N3LF

IPB110N20N3LF INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CDD33F73280749&compId=IPB110N20N3LF.pdf?ci_sign=57c3a81a5f34e089235de10d0a3e0e068655a3a9 Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 61A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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Технічний опис IPB110N20N3LF INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 61A; 250W; PG-TO263-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 61A, Power dissipation: 250W, Case: PG-TO263-3, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: SMD, Kind of channel: enhancement, Technology: OptiMOS™ 3.