IPC100N04S5L-1R1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ 5
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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Технічний опис IPC100N04S5L-1R1 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8, Case: PG-TDSON-8, Mounting: SMD, Technology: OptiMOS™ 5, Polarisation: unipolar, Type of transistor: N-MOSFET, Gate charge: 0.14µC, On-state resistance: 1.1mΩ, Power dissipation: 150W, Gate-source voltage: ±16V, Drain-source voltage: 40V, Drain current: 100A, Kind of channel: enhancement.