IPC70N04S5L-4R2 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
Technology: OptiMOS™ 5
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Технічний опис IPC70N04S5L-4R2 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 70A, Power dissipation: 50W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 4.2mΩ, Mounting: SMD, Kind of channel: enhancement, Gate charge: 30nC, Technology: OptiMOS™ 5.