IPC90N04S5-3R6 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Drain current: 90A
Power dissipation: 63W
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Технічний опис IPC90N04S5-3R6 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 3.6mΩ, Mounting: SMD, Kind of channel: enhancement, Technology: OptiMOS™ 5, Gate charge: 32.6nC, Drain current: 90A, Power dissipation: 63W.