Технічний опис IPD06P005LSAUMA1 Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 2V @ 270µA, Supplier Device Package: PG-TO252-3-313, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V.
Інші пропозиції IPD06P005LSAUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IPD06P005LSAUMA1 | Виробник : Infineon Technologies |
Description: MOSFET P-CH 60V 6.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO252-3-313 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
товару немає в наявності |