IPD06P005NSAUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
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Технічний опис IPD06P005NSAUMA1 Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3-313, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 28W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V.