Технічний опис IPD16CN10NG infineon
Description: MOSFET N-CH 100V 53A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 61µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V.
Інші пропозиції IPD16CN10NG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPD16CN10NG | Виробник : infineon | to-252/d-pak |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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IPD16CN10N G | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 100V 53A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 53A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 61µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V |
товару немає в наявності |