Продукція > INFINEON TECHNOLOGIES > IPD60R280CFD7
IPD60R280CFD7

IPD60R280CFD7 INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA746BF105C74A&compId=IPD60R280CFD7.pdf?ci_sign=eee2466600e65dfdc3beed43fe5dc29972e84cf0 Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3
Type of transistor: N-MOSFET
Kind of channel: enhancement
Polarisation: unipolar
Mounting: SMD
Gate charge: 18nC
On-state resistance: 0.536Ω
Drain current: 6A
Power dissipation: 51W
Gate-source voltage: ±20V
Technology: OptiMOS™
Drain-source voltage: 600V
Case: PG-TO252-3
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Технічний опис IPD60R280CFD7 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 51W; PG-TO252-3, Type of transistor: N-MOSFET, Kind of channel: enhancement, Polarisation: unipolar, Mounting: SMD, Gate charge: 18nC, On-state resistance: 0.536Ω, Drain current: 6A, Power dissipation: 51W, Gate-source voltage: ±20V, Technology: OptiMOS™, Drain-source voltage: 600V, Case: PG-TO252-3.