Технічний опис IPG20N06S2L65AAUMA1 Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 43W (Tc), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V, Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 14µA, Supplier Device Package: PG-TDSON-8-10.
Інші пропозиції IPG20N06S2L65AAUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPG20N06S2L65AAUMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 |
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