IPI90R800C3XKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 104W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of channel: enhanced
на замовлення 404 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 61.89 грн |
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Технічний опис IPI90R800C3XKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 900V 6.9A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 460µA, Supplier Device Package: PG-TO262-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPI90R800C3XKSA1 за ціною від 77.13 грн до 77.13 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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IPI90R800C3XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 104W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 104W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 404 шт: термін постачання 7-14 дні (днів) |
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IPI90R800C3XKSA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-262 Tube |
товар відсутній |
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IPI90R800C3XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 900V 6.9A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 460µA Supplier Device Package: PG-TO262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товар відсутній |