Технічний опис IPP070N06LG INF
Description: MOSFET N-CH 60V 80A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 2V @ 150µA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V.
Інші пропозиції IPP070N06LG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| IPP070N06LG | Виробник : infineon | 08+ |
на замовлення 100000 шт: термін постачання 14-28 дні (днів) |
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IPP070N06L G | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 60V 80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V |
товар відсутній |
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IPP070N06L G | Виробник : Infineon Technologies |
MOSFET Discrete Semiconductor Products MOSFETs, GaNFETs - Single - MOSFET N-CH 60V 80A TO-220 |
товар відсутній |