Продукція > INFINEON TECHNOLOGIES > IPP60R280CFD7
IPP60R280CFD7

IPP60R280CFD7 INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7B62D76E074A&compId=IPP60R280CFD7.pdf?ci_sign=36d68e51f2886998836337e5223819a9871553bf Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 52W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.536Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
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Технічний опис IPP60R280CFD7 INFINEON TECHNOLOGIES

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 52W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: OptiMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 6A, Power dissipation: 52W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 0.536Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 18nC.