Технічний опис IPP90R1K0C3XKSA1 Infineon Technologies
Description: MOSFET N-CH 900V 5.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 370µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V.
Інші пропозиції IPP90R1K0C3XKSA1
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IPP90R1K0C3XKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 900V 5.7A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 370µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 100 V |
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