Технічний опис IPT039N15N5XTMA1 Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 319W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 257µA, Supplier Device Package: PG-HSOF-8, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V.
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IPT039N15N5XTMA1 | Виробник : Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 319W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 257µA Supplier Device Package: PG-HSOF-8 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V |
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