IPW50R280CEFKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 500V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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Технічний опис IPW50R280CEFKSA1 Infineon Technologies
Description: MOSFET N-CH 500V 13A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V, Power Dissipation (Max): 92W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 350µA, Supplier Device Package: PG-TO247-3-1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V.
Інші пропозиції IPW50R280CEFKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPW50R280CEFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3 Mounting: THT Polarisation: unipolar On-state resistance: 0.28Ω Drain current: 13A Gate-source voltage: ±20V Power dissipation: 92W Drain-source voltage: 500V Technology: CoolMOS™ CE Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO247-3 Kind of package: tube |
товару немає в наявності |